参考文献
| 1) |
Ohki, Y., Toyoda, Y., Kobayasi, H., and Akasaki, I. "Fabrication and properties of a practical blue-emitting GaN" Inst. Phys. Conf. Ser. 63, 479(1981). |
| 2) |
Amano, H., Sawaki, N., Akasaki, I., and Toyoda, Y. "Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer" Appl. Phys. Lett. 48,353(1986). |
| 3) |
Akasaki, I., Amano, H., Koide, Y., Hiramatsu, K., Sawaki, N.,"Effects of AlN buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1-xAlxN
(0<x≦0.4) films grown on sapphire substrate by MOVPE", J. Crystal Growth 98, 209(1989). |
| 4) |
Amano, H. and Akasaki, I., "Fabrication and properties of GaN p-n junction LED", Mat. Res. Soc. Extended Abstract (EA-21) 165(1990). |
| 5) |
Amano, H., Akasaki, I., Kozawa, T., Hiramatsu, K., Sawaki, N., Ikeda, K., and Ishii, Y. "Electron Beam Effects on Blue Luminescence of Zinc-Doped GaN" J. Lumin. 40&41,121(1988). |
| 6) |
Amano, H., Kito, M., Hiramatsu, K., and Akasaki, I. "P-Type conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation(LEEBI)" Jpn. J. Appl. Phys. 28,L2112(1989). |
| 7) |
Amano, H., Asahi, T., and Akasaki, I. "Stimulate Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer Layer" Jpn. J. Appl. Phys. 29,L205(1990). |
| 8) |
Akasaki, I., Amano, H., Sota, S., Sakai, H., Tanaka, T., and Koike, M. "Stimulated Emission by Current Injection from an AlGaN/GaN/GaInN Quantum Well Device" Jpn. J. Appl. Phys. 34,L1517(1995). |
| 9) |
Akasaki, I., Sota, S., Sakai, H., Tanaka, T., Koike, M., and Amano, H. "Shortest wavelength semiconductor laser diode"Electron. Lett. 32,1105(1996). |
| 10) |
Nakamura, S. et al. "Novel metalorganic chemical vapor deposition system for GaN growth" Appl. Phys. Lett. 58,2021(1991). |
| 11) |
Nakamura, S. And Mukai, T. "High-Quality InGaN Films Grown on GaN Films" Jpn. J. Appl. Phys. 31,L1457(1992) |
| 12) |
Nakamura, S. "GaN Growth Using Buffer Layer" Jpn. J. Appl. Phys. 30,L1705(1991). |
| 13) |
Nakamura, S. et al. "Thermal Annealing Effects on P-Type Mg-Doped GaN Films" Jpn. J. Appl. Phys. 31,L139(1992). |
| 14) |
Nakamura, S. et al. "Hole Compensation Mechanism of p-type GaN Films" Jpn. J. Appl. Phys. 31,1258(1992). |
| 15) |
Nakamura, S. et al. "Candela-Class High-Brightness InGaN/AlGaN Double-Hetrostructure Blue-Light-Emitting Diodes" Appl. Phys. Lett. 64,1687(1994). |
| 16) |
Nakamura, S. et al. "High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes" Appl. Phys. Lett 67,1868(1995). |
| 17) |
Nakamura, S. et al. "InGaN-Based Multi-Quantum-Well-Structure Laser Diodes" Jpn. J. Appl. Phys. 35,L74(1996). |
| 18) |
Nakamura, S. et al. "Room-temperature continuou-wave operation of InGaN multi-quantum-well structure laser diodes" Appl. Phys. Lett. 69,4056(1996). |
| 19) |
Usui, A. et al. "Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy" Jpn. J. Appl. Phys. 36,L899(1997). |
| 20) |
Nakamura, S. "Current Status and Future Prospects of InGaN-Based Laser Diodes" JSAP International 1,5(2000). |
| 21) |
http://www.energy.ca.gov/releases/2002_releases/2002-03-14_led_signals.html
朝日新聞 2002年7月8日記事
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| 22) |
田口常正 "白色LEDと照明システム" O plus E p10,Aug.(2000). |
| 23) |
http://www.compoundsemiconductor.net/magazine/article/8/4/6/2 |
| 24) |
http://e-solution.nkk.co.jp/kankyo-q/q1-5.html
http://it.nikkei.co.jp/it/archive/chokoku/2001032505715p8.cfm
SRI report
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